2N5058 PBFREE

2N5058 2N5059 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5058 and 2N5059 are silicon NPN epitaxial planar transistors designed for high voltage general purpose amplifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current SYMBOL VCBO VCEO 2N5058 300 2N5059 250 UNITS V 300 250 V VEBO IC 7.0 6.0 V 150 mA PD PD 1.0 W 5.0 W -65 to +200 °C Thermal Resistance TJ, Tstg JA 150 °C/W Thermal Resistance JC 30 °C/W Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N5058 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=100V 50 ICBO IEBO VCB=100V, TA=125°C VEB=5.0V BVCBO BVCEO 2N5059 MIN MAX 50 UNITS nA - 20 - 20 μA - 10 - 10 nA IC=100μA 300 - 250 - V IC=30mA 300 - 250 - V BVEBO IE=100μA 7.0 - 6.0 - V VCE(SAT) IC=30mA, IB=3.0mA IC=30mA, IB=3.0mA - 1.0 - 1.0 V - 0.85 - 0.85 V VCE=25V, IC=30mA VCE=25V, IC=5.0mA VCE=25V, IC=30mA - 0.82 - 0.82 V 10 - - 10 35 150 30 150 VCE=25V, IC=30mA, TA=-55°C VCE=25V, IC=100mA 10 - - - 35 - 30 - 30 160 30 160 MHz Cob VCE=25V, VCB=10V, IE=0, f=1.0MHz - 10 - 10 pF Cib VEB=0.5V, IC=0, f=1.0MHz - 75 - 75 pF VBE(SAT) VBE(ON) hFE hFE hFE hFE fT IC=10mA, f=20MHz R1 (27-March 2015) 2N5058 2N5059 SILICON NPN TRANSISTORS TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (27-March 2015) w w w. c e n t r a l s e m i . c o m OUTSTANDING SUPPORT AND SUPERIOR SERVICES PRODUCT SUPPORT Central’s operations team provides the highest level of support to insure product is delivered on-time. • Supply management (Customer portals) • Custom bar coding for shipments • Inventory bonding • Custom product packing • Consolidated shipping options DESIGNER SUPPORT/SERVICES Central’s applications engineering team is ready to discuss your design challenges. Just ask. • Free quick ship samples (2nd day air) • Special wafer diffusions • Online technical data and parametric search • PbSn plating options • SPICE models • Package details • Custom electrical curves • Application notes • Environmental regulation compliance • Application and design sample kits • Customer specific screening • Custom product and package development • Up-screening capabilities REQUESTING PRODUCT PLATING 1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when ordering (example: 2N2222A TIN/LEAD). 2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number when ordering (example: 2N2222A PBFREE). CONTACT US Corporate Headquarters & Customer Support Team Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Main Tel: (631) 435-1110 Main Fax: (631) 435-1824 Support Team Fax: (631) 435-3388 www.centralsemi.com Worldwide Field Representatives: www.centralsemi.com/wwreps Worldwide Distributors: www.centralsemi.com/wwdistributors For the latest version of Central Semiconductor’s LIMITATIONS AND DAMAGES DISCLAIMER, which is part of Central’s Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms w w w. c e n t r a l s e m i . c o m (001)